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Motorola MJE15030-MBR Datasheet

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1
Motorola Bipolar Power Transistor Device Data
. . . designed for use as high–frequency drivers in audio amplifiers.
• DC Current Gain Specified to 4.0 Amperes
h
FE
= 40 (Min) @ I
C
= 3.0 Adc
h
FE
= 20 (Min) @ I
C
= 4.0 Adc
• Collector–Emitter Sustaining Voltage —
V
CEO(sus)
= 120 Vdc (Min) — MJE15028, MJE15029
V
CEO(sus)
= 150 Vdc (Min) — MJE15030, MJE15031
• High Current Gain — Bandwidth Product
f
T
= 30 MHz (Min) @ I
C
= 500 mAdc
• TO–220AB Compact Package
MAXIMUM RATINGS
Rating Symbol
MJE15028
MJE15029
MJE15030
MJE15031
Unit
Collector–Emitter Voltage V
CEO
120 150 Vdc
Collector–Base Voltage V
CB
120 150 Vdc
Emitter–Base Voltage V
EB
5.0 Vdc
Collector Current — Continuous
— Peak
I
C
8.0
16
Adc
Base Current I
B
2.0 Adc
Total Power Dissipation @ T
C
= 25 C
Derate above 25 C
P
D
50
0.40
Watts
W/ C
Total Power Dissipation @ T
A
= 25 C
Derate above 25 C
P
D
2.0
0.016
Watts
W/ C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +150
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
2.5
C/W
Thermal Resistance, Junction to Ambient R
θJA
62.5
C/W
0
Figure 1. Power Derating
T, TEMPERATURE (
°
C)
0
40 60 100 120 160
40
T
C
20
60
P
D
, POWER DISSIPATION (WATTS)
0
2.0
T
A
1.0
3.0
80 140
T
C
T
A
20
Preferred devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE15028/D
Motorola, Inc. 1995
*Motorola Preferred Device
8 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
120–150 VOLTS
50 WATTS
CASE 221A–06
TO–220AB
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Summary of Contents

Page 1 - SEMICONDUCTOR TECHNICAL DATA

1Motorola Bipolar Power Transistor Device Data. . . designed for use as high–frequency drivers in audio amplifiers.• DC Current Gain Specified to 4.0

Page 2 - Figure 2. Thermal Response

2Motorola Bipolar Power Transistor Device DataELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted)Characteristic Symbol Min Max UnitOFF CHAR

Page 3

3Motorola Bipolar Power Transistor Device Data202.0Figure 3. Forward Bias Safe Operating AreaVCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)16100.0220 120BOND

Page 4

4Motorola Bipolar Power Transistor Device DataIC, COLLECTOR CURRENT (AMP)IC, COLLECTOR CURRENT (AMP)hFE, DC CURRENT GAINFigure 8. DC Current GainFigu

Page 5 - TO–220AB

5Motorola Bipolar Power Transistor Device DataPACKAGE DIMENSIONSCASE 221A–06TO–220ABISSUE YNOTES:1. DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982

Page 6 - MJE15028/D

6Motorola Bipolar Power Transistor Device DataHow to reach us:USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–S

Page 7

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